Designing with Low-Side Gate Driver ICs Experiment Research on Carbon Nanotube Field Emission Performance with Flat Grid Structure 利用低端栅极驱动器IC进行系统开发平栅极结构碳纳米管场发射性能实验
Adopting gate resistance increased the rise time of edge, and adopting low output resistance of driver reduced the fall time. 通过低驱动内阻对栅极电容电荷的快速泄放提高脉冲后沿的下降速度。
An explosive situation, issue Designing with Low-Side Gate Driver ICs 一触即发的形势、极易引起争端的问题利用低端栅极驱动器IC进行系统开发
The woman was trying to argue with the truck driver at the site gate and wanted them to stop the late-hour construction bustle, but the driver ran her over. 老太当时在工地大门外与拉土车司机理论,希望他们停止夜间作业,但司机仍从其身上碾过。
Design& Implement of GATE/ SOURCE Pad ESD Protection in TFT_LCD Driver IC TFTLCD驱动芯片GATE/SOURCE静电保护电路设计与实现
The turn-on and turn-off of power devices under zero voltage are realized with addition of dead time. The power supply for GTO gate driver is developed by use of the converter. 通过设置死区时间实现开关功率器件的零电压开通与关断,利用该变换器研制出GTO门极驱动用电源。
A Strategy to Eliminate the Dead-Time Effect of PWM Inverter Based on IGBT Gate Driver 基于IGBT门驱动减小PWM逆变器死区影响的策略
Finally, we will introduce the whole design of gate driver and source driver and simulate. 最后,对栅驱动电路和源驱动电路的整体设计分别进行了详细的介绍,并分别给出了各自的整体电路结构图,还进行了具体的仿真。
A New Gate Driver Integrated Circuit for IGBT Devices with Advanced Protections 具有先进保护功能的新型IGBT门极驱动器集成电路
According to the large stray capacitance of the gate terminal of power MOSFET, this paper introduces the main characteristics and application of IC driver MAX626/ 7/ 8, especially designed for the high speed power MOSFET. 针对功率MOSFET栅极输入电容大的特点,本文介绍了专为高速度的功率MOSFET而设计的集成驱动器(ICdriver)MAX626/7/8的主要特性及典型应用电路,并给出了采用该芯片的超声波发生器电路。
The designs of operational amplifier, band-gap reference, input voltage pre-regulator, sawtooth generator circuit and gate driver for power MOSFET are mainly designed in this dissertation. 文中重点对芯片电路中的运算放大器电路、带隙基准电路、输入电压预调整电路、锯齿波发生器电路、开关MOS管驱动电路进行了设计。
The sub-module include reference source module, oscillator module, charge pump module, high-side gate driver module and low-side gate drive module are simulated and analyzed by tools. 利用仿真工具对包括基准源模块、振荡器模块、电荷泵模块、高端栅极驱动模块和低端栅极驱动模块在内的子模块进行了工作原理介绍与仿真分析。
In order to better protect the external power MOSFET, the gate driver input voltage can be clamped by the chip. 为了更好的保护外部MOSFET功率管,栅极驱动输入电压被钳位。
The driver circuit is designed by bus buffer gate with 3-states outputs, ensure the stimulation output has enough driver current and the high-speed switch between stimulation and response. 利用三态总线缓冲门设计了前端驱动电路,保证了激励输出有较大的驱动电流和激励响应之间的高速切换。